1997. 6. 24 1/2 semiconductor technical data KTA1267L epitaxial planar pnp transistor revision no : 1 low noise amplifier application. features excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). low noise : nf=0.2db(typ.), 3db(max.). complementary to ktc3199l. maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:70 140, y:120 240, gr:200 400 characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma emitter current i e 150 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-6v, i c =-2ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4.0 7.0 pf noise figure nf(1) v ce =-6v, i c =-0.1ma, f=100hz, rg=10k u - 0.5 6.0 db nf(2) v ce =-6v, i c =-0.1ma, f=1khz, rg=10k u - 0.2 3.0
1997. 6. 24 2/2 KTA1267L revision no : 1 collector power 0 c 0 ambient temperature ta ( c) pc - ta f - i e emitter current i (ma) 0.1 t transition frequency f (mhz) collector current i (ma) collector-emitter voltage v (v) c 0 ce 0 i - v cce -1 -2 -3 -4 -5 -6 -7 -8 -40 -80 -120 -160 -200 -240 -280 common emitter ta=25 c -2.0 -1.5 -1.0 -0.5 i =-0.2ma 0 b base-emitter voltage v (v) base current i ( a) 0 -0.3 b be i - v bbe -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.5 -1 -3 -5 -10 -30 -50 -100 -300 -500 -1k v =-6v ce ta=100 c ta=25 c ta=-2 5 c te 0.3 1 3 10 30 100 300 10 30 50 100 300 500 1k common emitter v =-10v ta=25 c ce c collector current i (ma) base-emitter saturation v - i -0.1 be(sat) -0.1 -30 c collector current i (ma) v - i ce(sat) c -0.1 -0.3 -0.5 -0.03 -0.03 -0.1 saturation voltage ce(sat) -0.01 -0.3 -1 -3 -10 -300 -100 collector-emitter v (v) common emitter i /i =10 c b ta=100 c ta=25 c ta=-25 c be(sat) c voltage v (v) -0.3 -1 -3 -10 -30 -100 -300 -0.3 -0.5 -1 -3 -5 -10 common emitter i /i =10 ta=25 c cb dissipation p (mw) 50 100 150 200 100 200 300 400 500 30 dc current gain h fe 1k -300 -100 -0.3 -0.1 collector current i (ma) c h - i fe c -1 -3 -10 -30 50 100 300 500 10 common ta=100 c ta=25 c ta=-25 c v =-6v ce ce v =-1v emitter
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